In this report, the tunneling coefficient (C-T) for GaN Schottky barrier diodes is extracted for analytical computation of the reverse leakage current. The extraction method is based up on fitting experimental data to the analytical equation by adjusting Schottky barrier height (phi(BN)) to account for defects. The tunneling coefficient (7.1 +/- 0.74) x 10(-12) cm(2) V-2 for GaN Schottky contacts is found to be independent of the size of the contact inspite of the presence of defects. (C) 2011 Elsevier Ltd. All rights reserved.