화학공학소재연구정보센터
Advanced Materials, Vol.22, No.43, 4819-4819, 2010
Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe-doped SrTiO3 metal-insulator-metal structures and gain insight into the active switching interface. Both a filamentary and an area-dependent switching process with opposite switching polarities are found in the same sample.