화학공학소재연구정보센터
Advanced Materials, Vol.22, No.44, 5029-5029, 2010
All-Manganite Tunnel Junctions with Interface-Induced Barrier Magnetism
In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.