A novel method to enhance the performance of pentacene thin-film transistors (TFTs) based on a blending polymeric dielectric is reported. By the inter-grain-enhancing process and the nucleation-controlling process, the morphology of pentacene has been optimized and the mobility of OTFT is enhanced up to 3.6 cm(2)/Vs. The mechanism of this technology is a "heterogeneity-employed" method, which is absolutely different from conventional "homogeneity-aimed" methods.