Fe/Ge multilayers were grown on single crystal Ge(001) substrates by molecular beam epitaxy. The structural, electronic and magnetic properties of Fe/Ge have been studied. The analysis shows that Fe grows in a layer-by-layer epitaxial growth mode on Ge(001) substrates at 150 degrees C and no intermixing has been observed. Growth of a crystalline Ge film at 150 degrees C on a single crystal Fe film has been observed. At this temperature Ge films grow by means of the island growth mode according to reflection of high energy electron diffraction patterns. Fe layers of 36 nm thickness, deposited at 150 degrees C on Ge(001) substrates, show two magnetization reversal values indicating the growth of Fe in two different crystal orientations. 36 nm thick Fe and Ge layers grown at 150 degrees C in Ge/Fe/Ge/Fe/Ge(001) sequence shows ferromagnetic behavior, however, the same structure grown at 200 degrees C shows paramagnetic behavior. (c) 2010 Elsevier B.V. All rights reserved.