화학공학소재연구정보센터
Applied Surface Science, Vol.257, No.10, 4603-4607, 2011
Metrological orientation-confirmation of Si(h h k) using scanning tunneling microscopy
For the periodicity-modulation of the Si(h h k) template between (0 0 1) and (1 1 1), it is necessary to prepare the surface with any orientation within this range, most especially for fabricating useful one-dimensional nanostructures. Especially, when there are no strong X-ray signals using the standard Cu K-alpha source in the vicinity of any arbitrarily chosen (H H K), it turns out that the line-profile analysis on the topographic image of scanning tunneling microscopy can be a unique way for confirming the orientation of the prepared surface. Though there are a number of small-width facets on the reconstructed surface, if any of well-defined facets, such as (1 1 1), (3 3 7), (1 1 2), and (3 3 5), are included in these facets it is possible to determine the orientation using the weighted-average method. (C) 2010 Elsevier B.V. All rights reserved.