The formation of ordered Sr overlayers on Si(1 0 0) by Atomic Layer Deposition (ALD) from bis(triisopropylcyclopentadienyl) Strontium (Sr((C5Pr3H2)-Pr-i)2) and H2O has been investigated. SrO overlayers were deposited on a 1-2 nm SiO2/Si(1 0 0) substrate, followed by a deoxidation process to remove the SiO2 layer at high temperatures. Auger electron spectroscopy, Rutherford backscattering spectrometry, spectroscopic ellipsometry, and low-energy electron diffraction were used to investigate the progress of both ALD and deoxidation processes. Results show that an ordered Sr/Si(1 0 0) surface with 2 x 1 pattern can be obtained after depositing several monolayers of SrO on Si using ALD followed by an anneal at 800-850 degrees C. The (2 x 1) ordered Sr/Si(1 00) surface is known to be an excellent template for the epitaxial growth of SrTiO3 (STO) oxide. The present results demonstrate that ALD is a potential alternative to molecular beam epitaxy methods for the fabrication of epitaxial oxides on semiconductor substrates. (c) 2011 Elsevier B.V. All rights reserved.