We report on the development of hybrid organic/inorganic thin-film transistors using regioregular poly-3-hexylthiophene (P3HT) semiconductor material deposited by means of the solid-phase Laser Induced Forward Transfer (LIFT) technique. P3HT pixels were LIFT-printed onto Au/Ti source and drain electrodes formed on silicon dioxide/p(+)-type Si substrate. Deposition of the P3HT pixels was investigated as a function of the laser fluence using donor substrates with and without a dynamic release layer. Device electrical characterization reveals efficient field-effect action of the bottom gate on the organic channel. The transfer I-DS-V-GS characteristics exhibit well-defined sub-threshold, linear and saturation regimes designating LIFT as a promising technique for hybrid organic/inorganic transistor technology. (C) 2010 Elsevier B. V. All rights reserved.