We demonstrate the nanoscale resistive random access memory (RRAM) element consisting of an approximately 30 nm diameter NiO nanodot and two bridging Au nanowires, formed by a dip-pen nanolithography technique using nickel carbonate (Ni-2(CO3)(OH)(2)) and [AuCl4](-) complex solutions, respectively. The Au/NiO/Au nanowire resistive switch exhibits typical unipolar switching characteristics with high performance at low Set and Reset voltages. (C) 2011 Elsevier B.V. All rights reserved.