(2 0 2)/(2 2 0)-oriented epitaxial beta-FeSi2 thin films were deposited on textured Si (1 0 0) substrate by magnetron sputtering. The influences of thickness and annealing temperature on the beta-FeSi2 crystallization were studied to find the optimal condition. The results of surface morphology and optical property measurements showed that the inverted pyramid array in the surface of beta-FeSi2 thin films could reduce the surface reflection of beta-FeSi2. In dark condition, the beta-FeSi2/textured-Si heterojunction showed diode property with rectifying ratio of 2.89 x 10(5) and built-in potential of 0.58 V. These results indicated the potential application of textured Si substrate in beta-FeSi2 solar cells. (C) 2011 Elsevier B.V. All rights reserved.