The reaction of Bis(ethyl-methyl-amino)silane (BEMAS) and water in atomic layer deposition (ALD) became possible when Zr-containing species were adsorbed on the vacant sites of the surface after a pulse and purge of BEMAS. The growth rates of the Si(Zr)O-x films were 0.8-0.9 nm/cycle in the temperature range of 185-325 degrees C. This phenomenon probably originates from the highly reactive hydroxyl species generated by Zr atoms. From this point of view, transition metals make reactant gas molecules to be highly activated in the ALD processes of transition metal oxides and nitrides, which might be an important factor that determines the ALD characteristics. (C) 2011 Elsevier B.V. All rights reserved.