Performance characteristics of p-i-n hetero-junction organic photovoltaic cell with CuPc:F4-TCNQ hole transport layer

Natarajan Senthilkumar; Sohyun Park; Hak-Su Kang; Dae Won Park; Youngson Choe

Journal of Industrial and Engineering Chemistry, Vol.17, No.4, 799-804, July, 2011

DOI10.1016/j.jiec.2011.05.022 Export Citation

Performance characteristics of p-i-n hetero-junction organic photovoltaic cell with CuPc:F4-TCNQ hole transport layer

Natarajan Senthilkumar, Sohyun Park, Hak-Su Kang, Dae Won Park , and Youngson Choe^†

Department of Chemical Engineering, Pusan National University, Busan 609-735, South Korea

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We have investigated the effect of strong p-type organic semiconductor F4-TCNQ-doped CuPc hole transport layer on the performance of p-i-n hetero-junction photovoltaic device from ITO/PEDOT:PSS/CuPc:F4-TCNQ (5 wt%)/CuPc:C60 (blending ratio 1:1)/C60/BCP/LiF/Al, fabricated via vacuum deposition process and have evaluated the J.V characteristics such as short circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and energy conversion efficiency (he) of the device. By doping of F4-TCNQ into CuPc hole transport layer, absorption intensities in absorption spectra were increased, which supports that uniform dispersion of organic molecules in the hole transport layer with lowered value of surface roughness can be obtained. Eventually, current injection was enhanced through the layer, which comparatively improves the performance of the photovoltaic cell with energy conversion efficiency of 0.50% in this study.

Keywords:F4-TCNQ;p-i-n type;Hetero-junction;Photovoltaic cell;Energy conversion efficiency

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[2] Peumans P, Yakimov A, Forrest SR, J. Appl. Phys., 93, 3693 (2003)

[3] Kim K, Liu J, Namboothiry MAG, Carrolla DL, Appl. Phys. Lett., 90, 163511 (2007)

[4] Kim JY, Lee K, Coates NE, Moses D, Nguyen TQ, Dante M, Heeger AJ, Science., 317, 222 (2007)

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[9] Jiang HJ, Zhou Y, Ooi BS, Chen YW, Wee T, Lam YL, Huang JS, Liu SY, Thin Solid Films, 363(1-2), 25 (2000)

[10] Xue J, Uchida S, Rand BP, Forrest SR, Appl. Phys. Lett., 85, 5757 (2004)

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[12] Yang F, Lunt RR, Forrest SR, Appl. Phys. Lett., 92, 053310 (2008)

[13] Aich R, Ratier B, Tran-van F, Goubard F, Chevrot C, Thin Solid Films., 516, 7171 (2008)

[14] Monestier F, Simon JJ, Torchio P, Escoubas L, Ratier B, Hojeij W, Lucas B, Moliton A, Cathelinaud M, Defranoux C, Flory F, Appl. Opt., 47, C251 (2008)

[15] Song QL, Li FY, Yang H, Wu HR, Wang XZ, Zhou W, Zhao JM, Ding XM, Huang CH, Hou XY, Chem. Phys. Lett., 416(1-3), 42 (2005)

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[18] Gao W, Kahn A, Org. Electron., 3, 53 (2002)

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[20] Maennig B, Pfeiffer M, Nollau A, Zhou X, Leo K, Simon P, Phys. Rev. B., 64, 195208 (2001)

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[27] Lee JY, Jang HK, Appl. Phys. Lett., 88, 183502 (2006)

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[29] Sullivan P, Jones TS, Ferguson AJ, Heutz S, Appl. Phys. Lett., 91, 233114 (2007)

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[31] Yu G, Zhang C, Heeger AJ, Appl. Phys. Lett., 64, 1540 (1994)

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[33] Peumans P, Forrest SR, Appl. Phys. Lett., 79, 126 (2001)