Copper films are deposited on a silicon substrate using plasma-assisted chemical fluid deposition (P-CFD) in supercritical carbon dioxide (scCO(2)). The deposition rate at the center (peak) of the deposited circle-shape film, as a function of environmental pressure at the constant temperature and current, shows a peak near the pressure of the density fluctuation maximum; indicating clustering effects in P-CFD. (C) 2010 Elsevier B.V. All rights reserved.