Raman and spreading resistance profiling have been used to analyze defects in germanium caused by hydrogen and helium implants, of typical fluences used in layer transfer applications. Beveling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post-implant annealing at 400 degrees C, some crystal damage remains, while at 600 degrees C, the crystal damage has been repaired. Helium implants create acceptor states beyond the projected range, and for both hydrogen and helium, 1 x 10(16) acceptors/cm(2) remain after 600 degrees C. These are thought to be vacancy-related point defect clusters. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3512999] All rights reserved.