Indium gallium zinc oxide (IGZO) films were deposited on glass substrates by co-sputtering In2Ga2ZnO7 and In2O3 targets. The structural, electrical, and optical properties of the IGZO films are investigated as functions of substrate temperature and radio frequency (rf) power supplied to the In2O3 target (P-rf,In2O3). The X-ray diffraction patterns show that the deposited IGZO films are amorphous in nature. The IGZO films have the lowest resistivity of 7.16 x 10(-4) Omega cm with an In content of 24.56 atom % at 175 degrees C substrate temperature. The optical transmittance at 400 nm exceeds 80% for all samples. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3529877] All rights reserved.