Amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with methyl-siloxane based gate dielectric were fabricated on glossy paper substrate at low processing temperature (<= 150 degrees C). Glossy paper planarized by acrylate polymer was introduced as a new low cost flexible substrate and its rms surface roughness of 1 nm was comparable to commercial glass substrate. Compared to low temperature (<= 150 degrees C) silicon dioxide dielectric, a-IGZO TFTs using a methyl-siloxane based dielectric on the paper substrate demonstrated excellent performances with field effect mobility of similar to 20 cm(2) V-1 s(-1), on/off current ratio of similar to 10(6), and low leakage current, which show the enormous potential for flexible electronics application. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3570612] All rights reserved.