Crystallization temperature of GeTe/Ge2Sb2Te5 nanocomposite multilayer films can be tuned by adjusting the thickness ratio of GeTe to Ge2Sb2Te5. Phase-change memory devices with GeTe/Ge2Sb2Te5 multilayer films exhibited relatively lower RESET voltages as compared to a device with pure Ge2Sb2Te5, which will promise a low programming power of a phase-change memory device. The reduced programming voltage may be due to the reduction in thermal conductivity. The cycle endurance of memory cells up to 1.8 x 10(5) cycles with a resistance ratio more than 100 has been achieved. Our experiments indicate that GeTe/Ge2Sb2Te5 nanocomposite multilayer films are promising candidate for phase-change memory applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3578386] All rights reserved.