This study investigated the growth and characterization of gallium antimonide (GaSb) nanowires produced on sapphire substrates by catalysis-free ultrasonic spray pyrolysis. GaSb nanowires were obtained at deposition temperatures of 500 and 600 degrees C. The GaSb nanowires have an absorption edge at around 1.25 eV. The GaSb nanowires deposited at 500 degrees C had better transmittance at the high-energy region with wavelengths similar to 950 nm. An XRD peak was observed at 2 theta angles of 32.62 degrees, and it is considered to be associated with the GaSb (002) orientation based on linear fitting. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3582931] All rights reserved.