In our previous work, we reported on silicon wire formation through the pit formed by metal-assisted chemical etching method as an alternative of a periodical etch pit with an inverted pyramid shape created by alkaline etching. We propose a further new process to fabricate silicon wires with a high aspect ratio not using the two-type etch pit in p-type silicon. The proposed process used a typical positive photoresist as an etching mask and a consecutive double-step current density method. The novel process is further simple and cost-effective, and decreases the number of total processes for electrochemical etching process. (C) 2011 The Electrochemical Society. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594111] All rights reserved.