SiGe/Si hetero structure has been examined using high resolution x-ray diffraction for strain and cross sectional transmission electron microscopy for implant induced defects with various p-type source drain implant conditions at room or cryogenic temperature. The implant induced end-of-range defects can be reduced by optimizing Ge pre-amorphization implant energy and at cryogenic temperature. The alleviated strain relaxation and lower junction leakage current are correlated to the cryo-implant defect reduction. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.023111esl] All rights reserved.