Metal/semiconductor thin films are a class of unique materials that have widespread technological application, particularly in the field of microelectronic devices. New strategies of fractal assessment for Pd/Ge bilayer films formed at Various annealing temperatures are of fundamental importance in the development of micro/nanodevices. Herein, Pd/Ge bilayer films with interesting fractal nanoclusters were successfully prepared by evaporation techniques. Temperature-dependent properties of resistance and fractal dimensions in Pd/Ge bilayer films with self-similar Ge fractal nanoclusters were investigated in detail. Experimental results indicated that the fractal crystallization behavior and film resistance in Pd/Ge bilayer films are influenced significantly by annealing temperatures and fractal dimensions. The measurements of film resistance confirmed that there is an evident relationship between the film resistance and the fractal dimension. These phenomena were reasonably explained by the random tunneling junction network mechanism.