We report on InAs nanocrystals (nc-InAs) grown on silicon dioxide (SiO(2)) by solid-source molecular beam epitaxy. We show that the growth parameters influence the properties of the nc-InAs in terms of density, size, and crystallinity. The growth temperature influences mainly the density of the nc-InAs, whereas their size can be controlled by the number of deposited InAs monolayers. Using an adequate set of parameters, we show that the nc-InAs properties are tunable in a range where the crystal structure presents zero defects. These nc-InAs grown on SiO(2) have high crystalline quality, making them perfectly suitable for advanced electronic devices. (C) 2011 Elsevier B.V. All rights reserved.