Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As-4 source

Li X; Guo H; Yin Z; Shi T; Wen L; Zhao Z; Liu M; Ma W; Wang Y

Journal of Crystal Growth, Vol.324, No.1, 82-87, 2011

DOI10.1016/j.jcrysgro.2011.04.004 Export Citation

Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As-4 source

Li X, Guo H, Yin Z, Shi T, Wen L, Zhao Z, Liu M, Ma W, Wang Y

GaAs nanowires growth on GaAs(1 1 1)B substrates by Au-assisted MBE with solid As-4 source were investigated as function of group III and V flux, growth time and growth temperature. It was found that the axial, radial growth and crystal structure of NWs could be controlled through tuning growth parameters. The optimal strategies for one dimensional nano-scale devices fabrications were also suggested. (C) 2011 Elsevier B.V. All rights reserved.

Keywords:Growth models;Molecular beam epitaxy (MBE);Nanowire;Semiconducting gallium arsenic