Journal of Crystal Growth, Vol.324, No.1, 290-295, 2011
Fabrication and characterization of AlP-GaP core-shell nanowires
We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:Nanostructures;Crystal structure;Low press;Metalorganic vapor phase epitaxy;Nanomaterials;Semiconducting aluminum compounds;Semiconducting III-V materials