Silica sheathed SnO2 microcables were grown directly on a Si substrate via a simple one-step vapor phase method, with high yield and uniform distribution, using gold as a catalyst. The morphology, the microstructure and the chemical composition of the microcables were characterized by means of scanning electron microscopy coupled with an X-ray microanalysis equipment, transmission electron microscopy, selected area diffraction pattern, X-ray diffraction and UV-vis and Raman spectroscopies. A possible growth mechanism of the microcables was also proposed on the basis of study of the products obtained at different thermal treatment times in the furnace. (C) 2011 Elsevier BM. All rights reserved.