V-shaped pits (V-defects) were observed in semipolar (11 (2) over bar2)-oriented InGaN/GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). The pit morphology was that of inverted rhombic or trigonal pyramids aligned along the in-plane [1 (1) over bar 00] direction. Pit facet orientations were identified. The surface pits were found to be connected at their apex to mixed type a+c threading dislocations with large screw components. Such dislocations exhibited (11 (2) over bar0] average line directions with zig-zag < 10 (1) over bar0 > local lines, and they also induced V-defects at the InGaN/GaN interface. (C) 2011 Elsevier B.V. All rights reserved.