Nd3+-doped Y3Al5O12 single crystal has been grown by the horizontal directional solidification (HDS) method. The crystal structure was determined by X-ray diffraction analysis, and the relatively small FWHM of the [111] symmetric rocking curve demonstrated the good crystallinity of the crystal. The distribution of Nd3+ ions was studied by the inductively coupled plasma atomic emission spectrometry (ICP-AES) method and the segregation coefficient was 0.234. The Nd3+ ions distribution along the [111] growth axis well agreed with the general distribution equation: C-s = CmK0(1-g)(K-1)(0), and the concentration of Nd3+ ions along the thickness and width direction (perpendicular to [111] growth axis) was near unity. The absorption and emission spectroscopy results indicated that the crystal had excellent laser optical quality for InGaAs diode-laser pumping. (c) 2011 Elsevier B.V. All rights reserved.