The morphology, structural and optical properties of void-assisted freestanding HVPE-AlN films were investigated by a combination of non-destructive microscopic and spectroscopic techniques. The freestanding approximately 80 mu m thick clear film has a wurtzite crystalline structure with remarkable properties around the central film region. The E-2(high)-phonon frequency coincides with reported stress-free film phonon frequency. The low temperature luminescence study of the growth and interface sides of the film is consistent with the incorporation of a high concentration of oxygen impurities. These results are promising as the growth method amenable to the production of freestanding stress-free large area substrates for epitaxial growth. Published by Elsevier B.V.