Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H-2 and N-2

Kumagai Y; Igi T; Ishizuki M; Togashi R; Murakami H; Takada K; Koukitu A

Journal of Crystal Growth, Vol.350, No.1, 60-65, 2012

DOI10.1016/j.jcrysgro.2011.12.023 Export Citation

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H-2 and N-2

Kumagai Y, Igi T, Ishizuki M, Togashi R, Murakami H, Takada K, Koukitu A

Heat treatment of (0001) sapphire substrates in the temperature range 980-1480 degrees C was investigated in an atmospheric-pressure mixed flow of H-2 and N-2 for various molar fractions of H-2 (F degrees=H-2/(H-2+ N-2)). At 1330 degrees C, AIN whiskers formed on the sapphire surfaces only when the heat treatment was performed in the presence of both H-2 and N-2 (0

Keywords:A1. Surface processes;A3. Chemical vapor deposition processes;B1. Nitrides;B1. Sapphire;B2. Semiconducting aluminum compounds