The reactions of gas-phase Cu+(S-1) and Cu+(D-3) with CF3X and CH3X (X = Cl, Br, and I) have been examined experimentally using the drift cell technique at 3.5 Torr in He at room temperature. State-specific product channels and overall bimolecular rate constants for depletion of the two Cu+ states were determined using electronic state chromatography. The results showed that Cu+(S-1) participates exclusively in association with all of these neutrals, whereas, depending on the neutral, Cu+(D-3) initiates up to three bimolecular processes, resulting in the formation of CuX+, CuC(H/F)(3)(+), and C(H/F)(3)X+. Possible structures for the singlet association products were explored using density functional methods. These calculations indicated that Cu+ preferentially associates with the labile halogen (Cl, Br, I) with all neutrals except CF3Cl, for which a "backside" geometry occurs in which Cu+(S-1) is weakly bound to the -CF3 end of the molecule. All products observed on the triplet reaction surface can be understood in terms of either known or calculated thermochemical requirements. Product distributions and overall reaction efficiencies for C-X bond activation (X = Br, I) through Cu+(D-3) suggest that the orientation of the neutral dipole has little or no effect in controlling access to specific product channels. Likewise, second-order rate constants for reactions with X = Br and I indicate efficient depletion of Cu+(D-3) and do not exhibit the dramatic variations in reaction efficiency previously observed with CH3Cl and CF3Cl. These results suggest that C-X bond activation proceeds through a bond-insertion mechanism as opposed to direct abstraction.