We have investigated electrical and microstructural properties of Pt-germanides as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Pt films reacted with Ge and produced Pt-germanides. The Pt(2)Ge(3) phase was completely transformed into PtGe(2) at the RTA temperatures in the excess of 500 degrees C. The specific contact resistivity (rho(c)) and sheet resistance (R(s)) were investigated as a function of germanidation temperatures. Both rho(c) and R(s) increased after the RTA process of 400 degrees C, and then decreased with increasing annealing temperature. The increase in R(s) and rho(c) at 400 degrees C could be associated with the presence of a highly resistive Pt(2)Ge(3) phase. RTA process at 700 degrees C led to the severe degradation of surface and interface morphologies of a PtGe(2) film caused by the agglomeration. This could be responsible for the main contribution to the increase in R(s) and rho(c). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3604398] All rights reserved.