In this work, the temperature behavior of trap-assisted tunneling (TAT) in Ge pFET junctions selectively grown in STI substrates is evaluated, whereby the impact of the electric field and the threading dislocation density (TDD) is studied for temperatures ranging from 233 to 418 K. The experimental results are compared with the TAT model for Si proposed by [G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, IEEE Trans. Electron Devices, 39, 331 (1992)], where several parameters (such as the effective mass and trap level values) are adapted in order to obtain the best agreement between the model and the experimental results. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3614518] All rights reserved.