Low temperature (200 degrees C) direct bonding of InP and Si3N4 coated silicon wafers using oxygen plasma surface treatment has been demonstrated, which transfers InP-based thin films onto Si substrates for heterogeneous photonic integration. Pulling test shows a high bonding energy comparable to the InP fracture energy. The high crystalline quality of the bonded thin film is preserved, as evident from photoluminescence and high resolution X-ray diffraction measurements. Cross-sectional transmission electron microscopy shows an intimately bonded interface with no observable defects generated near the bonded interface. A thin layer of amorphous oxide about 6 nm thick has been detected at the bonded interface. The hydrophilic interface obtained by oxygen plasma activation helps to achieve high quality bonding. Due to the high thermal conductivity of Si3N4, these high quality bonded structures of InP/Si with Si3N4 sandwiched in-between have potential applications in enhancing performance of high power Si photonic integrated devices. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.051205jes] All rights reserved.