The research into alternative channel materials to improve CMOS performance is a rapidly growing area of research. III-V and Ge based MOSFETs offer attractive possibilities for a high performance and low power circuit implementation. Here, we report a global performance analysis of future DualLogic CMOS based on the new, Implant-Free Quantum-Well device architecture for both III-V nMOSFETs and Ge pMOSFETs. The III-V nMOSFETs are optimised to achieve low leakage, high performance and its performance is evaluated using ensemble Monte Carlo simulations. A similar approach is adopted for the Ge pMOSFETs. In addition, the impact of the interface states density on the output characteristics is also studied. Finally, the timing performance of the DualLogic CMOS is evaluated using mixed mode TCAD and circuit simulations. (C) 2011 Elsevier Ltd. All rights reserved.