This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.