Solid-State Electronics, Vol.64, No.1, 54-56, 2011
Detailed study about influence of oxygen on trap properties in SiOxNy by the thermally stimulated current and maximum entropy method
The trap amount depending on trap energy levels [N-t(E-t)] in various silicon oxynitride films were investigated. Using the thermally stimulated current and the maximum entropy method, we determined N-t(E-t) with very high energy resolution. In N-t(E-t), many E-t were observed between 1.2 and 1.6 eV. Interestingly, their amounts significantly depended on the film compositions. The influence of oxygen on N-t(E-t) is also discussed. (C) 2011 Elsevier Ltd. All rights reserved.