Four methods for the measurement of c(p) are analyzed with the aim of applying them to the quantification of the small c(p) difference between the amorphous and crystalline states of silicon. It is concluded that conventional differential scanning calorimetry (DSC) is better suited than modulated DSC (MDSC) for this purpose. For silicon, Delta c(p) equivalent to c(p)(a) - c(p)(c) is equal to 1.1 J/K/mol at 600 degrees C and diminishes steadily below 0.5 J/K/mol at 100 degrees C. Additionally, the variation of c(p) due to dehydrogenation has also been quantified. (C) 2011 Elsevier B.V. All rights reserved.