화학공학소재연구정보센터
Advanced Materials, Vol.23, No.32, 3681-3681, 2011
High Electron Mobility in Air for N,N'-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces
High-mobility and air-stable n-type organic field transistors based on solution-crystallized N,N'-1H,1H-perfluorobutyldicyanoperylenecarboxydi-imide (PDIFCN(2)) are developed. Electron mobility as high as 1.3 cm(2) V(-1) s(-1) is achieved owing to the almost-perfect periodic crystal packing.