Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

Zhang HB; Yu HL; Bao DH; Li SW; Wang CX; Yang GW

Advanced Materials, Vol.24, No.1, 132-132, 2012

DOI10.1002/adma.201103530 Export Citation

Magnetoresistance Switch Effect of a Sn-Doped Bi2Te3 Topological Insulator

Zhang HB, Yu HL, Bao DH, Li SW, Wang CX, Yang GW

A reproducible and steady magnetoresistance switch effect of Sn-doped Bi(2)Te(3) topological insulator films with a Pt/Sndoped Bi(2)Te(3)/Pt structure is observed when a parallel magnetic field is applied.

Keywords:topological insulators;mangetoresistance;switch effects