The granular CuO films are deposited on n-Si (1 0 0) and sapphire substrates using sol-gel route. Small microstrain leads to similar to 5 times larger grain sizes (200-300 nm) and similar to 2.5 times larger film thickness (similar to 0.57 mu m) for sapphire than n-Si substrate, which are confirmed by X-ray diffraction and Atomic Force Microscopy. A diode-like current-voltage characteristics are observed for film deposited on n-Si substrate, which is absent for sapphire substrate. Typical manifestation of ferromagnetic character is observed for CuO films, which are strongly influenced by the substrates. Magnetic anisotropy is larger for sapphire substrate than n-Si substrate. At room temperature considerably large magnetoconductance similar to 21% and soft ferromagnetic character of CuO film on n-Si substrate are attractive for functional applications. (C) 2011 Elsevier B.V. All rights reserved.