This very paper is focusing on the preparation of silica nano-wires via annealing porous silicon wafer at 1200 degrees C in H(2) atmosphere and without the assistant metal catalysts. X-ray diffraction, X-ray energy dispersion spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and selected area diffraction technology have been employed for characterizing the structures, the morphology and the chemical components of the nano-wires prepared, respectively. It is found that the diameter and the length of the nano-wires were about 100 nm and tens micron, respectively. Meanwhile, it is also necessary to be pointed out that silica NWs only formed in the cracks of porous wafers, where the stress induced both by the electro-chemical etching procedure for the porous silicon preparation and nanowires growth procedure is believed to be lower than that at the center of the island. Therefore, a stress-driven mechanism for the NWs growth model is proposed to explain these findings. (C) 2011 Elsevier B.V. All rights reserved.