화학공학소재연구정보센터
Applied Surface Science, Vol.258, No.6, 1935-1939, 2012
Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(001) substrate
High density and ultrasmall size of Ge quantum dots (QDs) have been achieved directly on Si(0 0 1) (2 x 1) reconstruction surface. Their detailed morphology was observed by atomic force microscope (AFM) and shows that small pyramids, small domes, huts, and multi-headed large domes coexist in the film grown at 400 degrees C, while small domes and multi-headed large domes formed at 450 degrees C. Their low temperature photoluminescence (PL) showed that a very strong non-phonon (NP) peak with a large blue shift of 0.19 eV at 14 K, which can be attributed to their very high areal density, 5.2 x 1011 cm(-2), and sub-10-nm mean size, 7.6 +/- 2.3 nm. (C) 2011 Elsevier B. V. All rights reserved.