We report here on the first study of the interfacial reactions of nanoscale Ni metal dots on single-crystal Si1-xCx(1 0 0) substrates at various heat treatments. The formation of high-resistivity NiSi2 phase was found to be more favorable for the miniature size Ni nanodots. The incorporation of C to Si substrates exhibited significant beneficial effects on improving the thermal stability of low-resistivity NiSi nanocontacts. The process window of low-resistivity NiSi in the Ni nanodots/Si1-xCx(1 0 0) sample was greatly extended by 200-250 degrees C as compared to that in the Ni nanodots/Si(1 0 0) sample. The presence of C atoms is thought to lower the NiSi nanocontact/Si1-xCx interface energy and/or to block the Ni diffusion paths during high temperature annealing. For the Ni nanodots/Si1-xCx(1 0 0) sample annealed at 900 degrees C, highly curled and tangled amorphous SiOx nanowires with diameters of 8-20 nm were found to form. The growth process of these amorphous SiOx nanowires could be explained by the solid-liquid-solid (SLS) mechanism. (C) 2012 Elsevier B.V. All rights reserved.