Vanadium dioxide thin films were deposited on c-cut sapphire and MgO(111) substrate using pulsed laser deposition method to investigate the effect of lattice misfit between the thin film and the substrate on the transition temperature of VO2 thin film. All vanadium dioxide thin films showed heteroepitaxial growth with (002) preferred orientation. VO2/c-sapphire and VO2/MgO(111) had different transition temperatures, regardless of the thickness, orientation, and deposition conditions of the thin film. These results suggest that considering lattice mismatch between thin film and substrate is another promising option for controlling transition temperature of VO2 thin films.