In this paper, the improved characteristics of 10 V tolerant high-voltage n-channel lateral double diffused metal-oxide-semiconductor devices, using a pure 0.25 mu m standard low-voltage complementary metal-oxide-semiconductor (CMOS) logic process with dual Late oxide, are described. The fabricated transistors showed about 30% better Current driving characteristics and about 40% higher drain operating voltage than previous reports of these kinds of devices. The transistors maintained a breakdown voltage, BVDSS, over 14 V. These devices also showed good sub-threshold characteristics. This paper describes the cost-effective and high performance n-channel high-voltage LDMOS using a pure low-voltage standard CMOS logic process. (C) 2007 Elsevier B.V. All rights reserved.