A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-lc-Si1-xOx: H influences the hetero-junction lc-Si: H solar cells. We observed that the open-circuit voltage (Voc) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/ i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction lc-Si: H solar cells. From simulation result, it was confirmed that the Voc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction lc-Si: H solar cells. The enhancement of Voc (DVoc) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-lc-Si1-xOx: H is promising for use as window layer in hetero-junction lc-Si: H solar cells. (C) 2010 Elsevier B. V. All rights reserved.