The metal-assisted chemical etching (MCE) has attracted great attention because of the advantages such as simple and large area process, low-cost and compatible with existing semiconductor technology. We have achieved optimization conditions about two kinds of MCE method for fabrication of p-type silicon wire arrays. First one is one-step MCE that used AgNO(3) and BOE solution and second is two-step MCE in which silicon etching proceeds by BOE and H(2)O(2) solution after depositing Au by thermal evaporation. Particularly, the effect of etching parameters, such as etching time and AgNO(3) concentration in one-step MCE and metal catalyst thickness and etching solution temperature in two-step MCE on fabrication of silicon was investigated a morphology, length and etch rate of silicon wire. Finally, we have found important factors for fabrication of uniform and well aligned p-type silicon wire by MCE. Crown Copyright (C) 2010 Published by Elsevier B. V. All rights reserved.