We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol-gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 degrees C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S. S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 degrees C were 4.02 cm(2) V(-1) s(-1), 0.94 V/decade, 3.13 V, and >10(6), respectively. (C) 2010 Elsevier B. V. All rights reserved.