화학공학소재연구정보센터
Current Applied Physics, Vol.11, No.1, 87-92, 2011
A low-power 3.1-10.6 GHz ultra-wideband CMOS low-noise amplifier with common-gate input stage
A low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed exploiting a current-reused technique operating in the frequency range of 3.1-10.6 GHz. The technique stacks two-stage amplifiers in dc, thereby reusing the dc current and saving the power consumption significantly. With the common-gate configuration at the input stage, broad-band input matching is obtained with less than -5 dB input reflection coefficient in 3-10 GHz frequency range. Fabricated with 0.18-mu m RFCMOS technology, the proposed LNA achieves about 10 dB power gain and noise figure (NF) of 4.6-7.8 dB within 3 dB bandwidth of 2.2-9.7 GHz. The LNA core excluding the buffer consumes only 2.9 mW from a 1.8 V supply voltage. The input third order intercept point (IIP3) of the LNA is -8.5 dBm at 6 GHz. (C) 2010 Elsevier B.V. All rights reserved.