Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO(2)-coated n-type Si wafer with the p-type source and drain regions and Au electrodes for the source, drain, and gate terminals were formed by thermal evaporation, followed by wet chemical etching. The on/off ratio and memory window width of the fabricated ferroelectric-gate FET were typically 10(7) and 5 V at the gate voltage swing of +/- 11 V, respectively. As for the data retention characteristics, the current on/off ratio of approximately 10(3) was obtained at 10(3) s after write operation. (C) 2011 Elsevier B.V. All rights reserved.